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Implantation Defects and n-type Doping in Ge and Ge rich SiGe

Vertaisarvioitu
DOI
10.1016/j.tsf.2008.08.088
Peaker, A.R.; Markevich, V.P.; Hamilton, B.; Hawkins, I.D.; Slotte, J.; Kuitunen, K.; Tuomisto, F.; ...
Thin Solid Films2008

Monolithic Ge integration on the 3 µm SOI platform for 40 GHz photodiodes

Vertaisarvioitu
DOI
10.1149/09805.0303ecst
Aalto, Timo; Vehmas, Tapani; Kapulainen, Markku; Heimala, Päivi; Delrosso, Giovanni; Sun, Fei; Gao, ...
ECS Transactions2020

Self assembled In(Ga)As islands on Ge substrate

Vertaisarvioitu
DOI
10.1016/j.jcrysgro.2004.08.063
Knuuttila, Lauri; Korkala, T.; Sopanen, Markku; Lipsanen, Harri
Journal of Crystal Growth2004

Formation of excess donors during (74)Ge(+) ion implantation

Vertaisarvioitu
Xia, Z.; Ristolainen, Eränen; Ronkainen, H.; Suni, J.; Elliman, R.; Sopanen, M.; Holloway, P.
MATERIALS RESEARCH SOCIETY1994

Advances in positron annihilation spectroscopy of Si, Ge and their alloys

Vertaisarvioitu
DOI
10.1016/j.mssp.2012.06.016
Slotte, J.; Tuomisto, F.
Materials Science in Semiconductor Processing2012

Low Temterature GaAs on Ge substrate bu metalorganic vapor phase epitaxy

Knuuttila, Lauri; Lankinen, Aapo; Lipsanen, Harri
-2005

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Vertaisarvioitu
DOI
10.1016/j.sse.2014.04.015
Shah, V.A.; Myronov, M.; Rhead, S.D.; Halpin, J.E.; Shchepetov, Andrey; Prest, M.J.; Prunnila, Mika;...
Solid-State Electronics2014

Amorphous structures of Ge/Sb/Te alloys: Density functional simulations

Vertaisarvioitu
DOI
10.1002/pssb.201200393
Akola, Jaakko; Jones, O.R.
Physica status solidi B : basic research2012

Enhanced efficiency of hematite photoanode for water splitting with the doping of Ge

Vertaisarvioitu
DOI
10.1016/j.ijhydene.2018.04.115
Zhao, Le; Xiao, Jingran; Huang, Huali; Huang, Qiuyang; Zhao, Yicheng; Li, Yongdan
International Journal of Hydrogen Energy2018

Monolithic integration of up to 40 GHz Ge photodetectors in 3μm SOI

Vertaisarvioitu
DOI
10.1117/12.2542165
Vehmas, Tapani; Kapulainen, Markku; Heimala, Päivi; Delrosso, Giovanni; Sun, Fei; Gao, Feng; Aalto, ...
Proceedings of SPIE2020

Implantation Defects and n-type Doping in Ge and Ge rich SiGe

Vertaisarvioitu
DOI
10.1016/j.tsf.2008.08.088
2008

Monolithic Ge integration on the 3 µm SOI platform for 40 GHz photodiodes

Vertaisarvioitu
DOI
10.1149/09805.0303ecst
2020

Self assembled In(Ga)As islands on Ge substrate

Vertaisarvioitu
DOI
10.1016/j.jcrysgro.2004.08.063
2004

Formation of excess donors during (74)Ge(+) ion implantation

Vertaisarvioitu
1994

Advances in positron annihilation spectroscopy of Si, Ge and their alloys

Vertaisarvioitu
DOI
10.1016/j.mssp.2012.06.016
2012

Low Temterature GaAs on Ge substrate bu metalorganic vapor phase epitaxy

2005

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Vertaisarvioitu
DOI
10.1016/j.sse.2014.04.015
2014

Amorphous structures of Ge/Sb/Te alloys: Density functional simulations

Vertaisarvioitu
DOI
10.1002/pssb.201200393
2012

Enhanced efficiency of hematite photoanode for water splitting with the doping of Ge

Vertaisarvioitu
DOI
10.1016/j.ijhydene.2018.04.115
2018

Monolithic integration of up to 40 GHz Ge photodetectors in 3μm SOI

Vertaisarvioitu
DOI
10.1117/12.2542165
2020