2025

Mayo, Jorge; Durán, Cristina; Cueto-Rodríguez, Juan; Franco, Francisco J.; Kettunen, Heikki

This manuscript investigates the heavy ion effects on the novel 7-nm FinFET AMD (formerly, Xilinx) Versal SoC, namely on the configuration memory of the embedded FPGA. The experiment consisted in loading a program in a delidded device, irradiating in static mode and reading back the content. Several species and configurations were used to test the device. First of all, it was tested the efficiency of the XilSEM tool, provided by the manufacturer to fix erroneous bits. Second, this tool was disabled to find out the cross sections of the single event upsets of different multiplicities. Flipped upsets were classified using statistical techniques to reconstruct the multiple cell upsets. No multiple bit upset occurred and only 4-bit multiple cell upsets were observed in the worst cases, although it is clear that the cross section of the 2-bit multiple cell upsets is comparable to that of single bit upsets. Later, a strategy to carry out fault injection campaigns is proposed taking into account the knowledge acquired after the radiation tests, and the expected error rates in actual space environments is studied.