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Microstructural and mechanical characterization of Cu/Sn SLID bonding utilizing Co as contact metallization layer

Julkaisuvuosi

2022

Tekijät

Emadi, F.; Vuorinen, V.; Mertin, Stefan; Widell, K.; Paulasto-Kröckel, M.

Tiivistelmä

<p>Most micro-electro-mechanical systems (MEMS) devices contain fragile moving parts, which poses challenges in process integration of interconnection methods requiring wet-chemistry, such as solid-liquid interdiffusion bonding (SLID). These sensitive MEMS structures can be protected from either the wet-chemistry or plated metals during chemical/electro-chemical plating of SLID interconnection materials; however, this is a complex process. Hence, our previous research has investigated employing a physically deposited contact metallization on the wafers containing functional devices instead of chemically deposited layers (such as electrochemical Cu). Co is a plausible contact metallization layer for Cu-Sn SLID bonding, as it is chemically compatible with Cu–Sn systems. Furthermore, it can positively impact the mechanical reliability of the intermetallic compounds (IMCs) due to the stabilizing of the HT-hexagonal Cu<sub>6</sub>Sn<sub>5</sub> phase down to room temperature and suppressing the Cu<sub>3</sub>Sn phase formation and subsequent void formation. However, it is critical to control Co thickness to achieve a stable bond based on our previous research on Co bulk in contact with Cu-Sn electroplated silicon chips. To utilize Co as a contact metallization layer for wafer-level Cu-Sn SLID bonding, it is necessary to define appropriate metal layers in the contact metallization stack. Consequently, the present study investigated four different contact metallization stacks including A) 40nmTi/100 nm Co, B) 40 nm Ti/200 nm Mo/100 nm Co, C) 40 nm Ti/500 nm Co, and D) 40 nm Ti/200 nm Mo/500 nm Co. More specifically, we evaluated the microstructural formation and evolution and mechanical performance of the joints. Our study revealed that the Ti/Mo/100 nm Co contact metallization stack for (4 µm)Cu/(2 µm)Sn SLID bonding is composed of IMCs (Cu,2.5at%Co)<sub>6</sub>Sn<sub>5</sub> and Cu<sub>3</sub>Sn without remaining Sn. Moreover, the joint contained a negligible number of voids even after long-time annealing at 150 °C. Our analysis of the mechanical properties of the joint showed that 1) the tensile fracture surface exhibited a mixture of ductile and brittle fractures, and 2) the Young's modulus of (Cu,2.5at%Co)<sub>6</sub>Sn<sub>5</sub> was higher than Cu<sub>6</sub>Sn<sub>5</sub>, while hardness of (Cu,2.5at%Co)<sub>6</sub>Sn<sub>5</sub> and Cu<sub>6</sub>Sn<sub>5</sub> were comparable. By employing a Ti/Mo/100 nm Co contact metallization stack, the current study was able to produce 25 µm and 10 µm void free (4 µm Cu/2 µm Sn) microbumps.</p>
Näytä enemmän

Organisaatiot ja tekijät

Aalto-yliopisto

Emadi Fahimeh Orcid -palvelun logo

Widell Kim

Paulasto-Kröckel Mervi Orcid -palvelun logo

Vuorinen Vesa Orcid -palvelun logo

Julkaisutyyppi

Julkaisumuoto

Artikkeli

Emojulkaisun tyyppi

Lehti

Artikkelin tyyppi

Alkuperäisartikkeli

Yleisö

Tieteellinen

Vertaisarvioitu

Vertaisarvioitu

OKM:n julkaisutyyppiluokitus

A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Julkaisukanavan tiedot

Kustantaja

Elsevier

Volyymi

929

Artikkelinumero

167228

Julkaisu­foorumi

59526

Julkaisufoorumitaso

1

Avoin saatavuus

Avoin saatavuus kustantajan palvelussa

Kyllä

Julkaisukanavan avoin saatavuus

Osittain avoin julkaisukanava

Rinnakkaistallennettu

Kyllä

Muut tiedot

Tieteenalat

Kone- ja valmistustekniikka; Materiaalitekniikka

Avainsanat

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Kustantajan kansainvälisyys

Kansainvälinen

Kieli

englanti

Kansainvälinen yhteisjulkaisu

Ei

Yhteisjulkaisu yrityksen kanssa

Ei

DOI

10.1016/j.jallcom.2022.167228

Julkaisu kuuluu opetus- ja kulttuuriministeriön tiedonkeruuseen

Kyllä